an itw company from deep uv to mid-ir revision july 13 , 2018 page 1 of 4 high - power gaalas ir emitters o d - 850l features high optical output 850 nm peak emission hermetically sealed to - 46 package medium emission angle for best coverage/power density parameters test conditions min typ max units total power output, p o i f = 100 ma 25 35 mw peak emission wavelength, p i f = 2 0 ma 850 nm spectral bandwidth at 50 %, ? i f = 2 0 ma 4 0 nm half intensity beam angle, i f = 2 0 ma 35 deg forward voltage, v f i f = 100 ma 1. 6 2 v olts reverse breakdown voltage, v r i r = 10 a 5 30 v olts rise time i f p = 5 0 ma 20 nsec fall time i f p = 5 0 ma 20 nsec parameters units power dissipation 200 m w continuo us forward current 10 0 ma peak forward current (10 s, 200 hz) 1 3 00 m a reverse voltage 5 v olts lead soldering temperature (1/16" from case for 10 sec) 26 0 c parameters units storage and operating temperature range - 40 c to 1 0 0 c maximum junction temperature 1 0 0 c thermal resistance, r thja 1 400 c /w typical thermal resistance, r thja 2 135 c /w typical electro - optical characteristics at 25 c absolute maximum ratings at 25c thermal parameters 1 heat transfer minimized by measuring in still air with minimum heat conducting through leads . 2 air circulating at a rapid rate to keep case temperature at 25 c . 1 derate per thermal derating curve above 25 c.
an itw company from deep uv to mid-ir revision july 13 , 2018 page 2 of 4 high - power gaalas ir emitters o d - 850l ambient temperature (?c) ifinite heat sink no heat sink 0 200 400 600 800 1000 1200 25 50 75 100 power dissapation (mw) 50 60 70 80 90 100 relative power output (%) stress time, (hrs) 10 1 10 2 10 3 10 4 10 5 t case = 25 ? no pre burn-in performed i f = 20 ma i f = 50 ma i f = 100 ma i f = 100 ma (-3 ) relative power output (%) -50 -40 -30 -20 -10 0 10 20 30 40 50 0 20 40 60 80 100 beam angle, (deg) maximum rated thermal derating curve typical degradation curve typical radiation pattern
an itw company from deep uv to mid-ir revision july 13 , 2018 page 3 of 4 high - power gaalas ir emitters o d - 850l relative power output -50 -25 0 25 50 75 100 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 ambient temperature (?) wavelength (nm) 0 20 40 60 80 100 750 800 850 900 950 relative power output (%) 10 100 1 10 100 relative power outout, p o (mw) dc forward current, i f (ma) typical power output vs temperature typical spectral output typical power output vs forward current
an itw company from deep uv to mid-ir revision july 13 , 2018 page 4 of 4 high - power gaalas ir emitters o d - 850l all surfaces are gold plated. dimensions are nominal values in inc hes unless otherwise specified. window c aps are welded to the case. package information ordering information 1260 calle suerte, camarillo, california 93012 phone: +1 805.499.03 3 5 | fax: +1 805.499.8108 | sales@optodiode.com | www. optodiode.com o d - 850 - 003 medium angle to - 46 850 nm ir emitter shipped in esd bag specifications are subject to change without prior notice.
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